50 nm continuously tunable MEMS VCSEL devices with surface micromachining operating at 1.95 μm emission wavelength
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Abstract
An investigation of micro-electro-mechanical-system vertical-cavity surface-emitting lasers at 1.95 μm emission wavelength grown on InP is presented. The top sided distributed Bragg reflector has been substituted by a dielectric SiOx/SiNy membrane. Its deflection causes a continuous change of emission wavelength due to cavity tuning. The membrane actuation can be achieved in two different ways: by electrostatic attraction and electrothermal expansion. The recently developed surface-micro-machining technique allows both tuning mechanisms on one and the same device. The maximum achieved continuous tuning range is 50 nm with side-mode-suppression-ratios beyond 50 dB over the entire tuning range. Peak optical output powers of 1.0 to 1.8 mW with threshold current densities of 2.2 kA cm-2 will be presented.
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Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Zogal, Karolina" uniqKey="Zogal K">Karolina Zogal</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Photonics and Optical Communications, Technische Universitat Darmstadt, Merckstrasse 25</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Debernardi, Pierluigi" uniqKey="Debernardi P">Pierluigi Debernardi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IEIIT-CNR, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Gierl, Christian" uniqKey="Gierl C">Christian Gierl</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Photonics and Optical Communications, Technische Universitat Darmstadt, Merckstrasse 25</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Grasse, Christian" uniqKey="Grasse C">Christian Grasse</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748 Garching</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>85748 Garching</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Geiger, Kathrin" uniqKey="Geiger K">Kathrin Geiger</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748 Garching</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>85748 Garching</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Meyer, Ralf" uniqKey="Meyer R">Ralf Meyer</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748 Garching</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>85748 Garching</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Boehm, Gerhard" uniqKey="Boehm G">Gerhard Boehm</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748 Garching</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>85748 Garching</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Amann, Markus Christian" uniqKey="Amann M">Markus-Christian Amann</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748 Garching</wicri:noRegion><wicri:noRegion>Am Coulombwall 4</wicri:noRegion><wicri:noRegion>85748 Garching</wicri:noRegion><orgName type="university">Université Louis-et-Maximilien de Munich</orgName><placeName><settlement type="city">Munich</settlement><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region></placeName></affiliation></author><author><name sortKey="Meissner, Peter" uniqKey="Meissner P">Peter Meissner</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Photonics and Optical Communications, Technische Universitat Darmstadt, Merckstrasse 25</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Kueppers, Franko" uniqKey="Kueppers F">Franko Kueppers</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Photonics and Optical Communications, Technische Universitat Darmstadt, Merckstrasse 25</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0081675</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0081675 INIST</idno><idno type="RBID">Pascal:13-0081675</idno><idno type="wicri:Area/Main/Corpus">001273</idno><idno type="wicri:Area/Main/Repository">001234</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term><term>Distributed Bragg reflectors</term><term>Electrostatics</term><term>Microelectromechanical device</term><term>Micromachining</term><term>Output power</term><term>Semiconductor laser</term><term>Surface emitting laser</term><term>Threshold current</term><term>Vertical cavity laser</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser cavité verticale</term><term>Laser émission surface</term><term>Microusinage</term><term>Laser semiconducteur</term><term>Réflecteur Bragg réparti</term><term>Electrostatique</term><term>Puissance sortie</term><term>Courant seuil</term><term>Densité courant</term><term>Dispositif microélectromécanique</term><term>Substrat indium phosphure</term><term>Substrat InP</term><term>8585</term><term>4255P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An investigation of micro-electro-mechanical-system vertical-cavity surface-emitting lasers at 1.95 μm emission wavelength grown on InP is presented. The top sided distributed Bragg reflector has been substituted by a dielectric SiO<sub>x</sub>/SiN<sub>y</sub> membrane. Its deflection causes a continuous change of emission wavelength due to cavity tuning. The membrane actuation can be achieved in two different ways: by electrostatic attraction and electrothermal expansion. The recently developed surface-micro-machining technique allows both tuning mechanisms on one and the same device. The maximum achieved continuous tuning range is 50 nm with side-mode-suppression-ratios beyond 50 dB over the entire tuning range. Peak optical output powers of 1.0 to 1.8 mW with threshold current densities of 2.2 kA cm<sup>-2</sup> will be presented.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>50 nm continuously tunable MEMS VCSEL devices with surface micromachining operating at 1.95 μm emission wavelength</s1></fA08><fA11 i1="01" i2="1"><s1>GRUENDL (Tobias)</s1></fA11><fA11 i1="02" i2="1"><s1>ZOGAL (Karolina)</s1></fA11><fA11 i1="03" i2="1"><s1>DEBERNARDI (Pierluigi)</s1></fA11><fA11 i1="04" i2="1"><s1>GIERL (Christian)</s1></fA11><fA11 i1="05" i2="1"><s1>GRASSE (Christian)</s1></fA11><fA11 i1="06" i2="1"><s1>GEIGER (Kathrin)</s1></fA11><fA11 i1="07" i2="1"><s1>MEYER (Ralf)</s1></fA11><fA11 i1="08" i2="1"><s1>BOEHM (Gerhard)</s1></fA11><fA11 i1="09" i2="1"><s1>AMANN (Markus-Christian)</s1></fA11><fA11 i1="10" i2="1"><s1>MEISSNER (Peter)</s1></fA11><fA11 i1="11" i2="1"><s1>KUEPPERS (Franko)</s1></fA11><fA14 i1="01"><s1>Walter Schottky Institut, Technische Universität München, Am Coulombwall 4</s1><s2>85748 Garching</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Photonics and Optical Communications, Technische Universitat Darmstadt, Merckstrasse 25</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="03"><s1>IEIIT-CNR, Politecnico di Torino, Corso Duca degli Abruzzi 24</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>3 aut.</sZ></fA14><fA20><s2>012001.1-012001.4</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000509047970010</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0081675</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>An investigation of micro-electro-mechanical-system vertical-cavity surface-emitting lasers at 1.95 μm emission wavelength grown on InP is presented. The top sided distributed Bragg reflector has been substituted by a dielectric SiO<sub>x</sub>/SiN<sub>y</sub> membrane. Its deflection causes a continuous change of emission wavelength due to cavity tuning. The membrane actuation can be achieved in two different ways: by electrostatic attraction and electrothermal expansion. The recently developed surface-micro-machining technique allows both tuning mechanisms on one and the same device. The maximum achieved continuous tuning range is 50 nm with side-mode-suppression-ratios beyond 50 dB over the entire tuning range. 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